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 1N4728A - 1N4764A Series
1 Watt DO-41 Hermetically Sealed Glass Zener Voltage Regulator Diodes
This is a complete series of 1 Watt Zener diode with limits and excellent operating characteristics that reflect the superior capabilities of silicon-oxide passivated junctions. All this in an axial-lead hermetically sealed glass package that offers protection in all common environmental conditions.
Specification Features: http://onsemi.com
* * * * * *
Zener Voltage Range -- 3.3 V to 91 V ESD Rating of Class 3 (>16 KV) per Human Body Model DO-41 (DO-204AL) Package Double Slug Type Construction Metallurgical Bonded Construction Oxide Passivated Die
AXIAL LEAD CASE 59 GLASS
Mechanical Characteristics: CASE: Double slug type, hermetically sealed glass FINISH: All external surfaces are corrosion resistant and leads are
readily solderable
MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES:
L 1N 47 xxA YWW
230C, 1/16 from the case for 10 seconds POLARITY: Cathode indicated by polarity band MOUNTING POSITION: Any
MAXIMUM RATINGS
Rating Max. Steady State Power Dissipation @ TL 50C, Lead Length = 3/8 Derated above 50C Operating and Storage Temperature Range Symbol PD Value 1.0 6.67 TJ, Tstg - 65 to +200 Unit Watt mW/C C
L = Assembly Location 1N47xxA = Device Code Y = Year WW = Work Week
Cathode
Anode
ORDERING INFORMATION (1.)(NO TAG)
Device 1N47xxA 1N47xxARL 1N47xxARL2 1N47xxATA 1N47xxATA2 Package Axial Lead Axial Lead Axial Lead Axial Lead Axial Lead Shipping 2000 Units/Box 6000/Tape & Reel 6000/Tape & Reel 4000/Ammo Pack 4000/Ammo Pack
NOTES: 1. The "2" suffix refers to 26 mm tape spacing.
Devices listed in bold, italic are ON Semiconductor Preferred devices. Preferred devices are recommended choices for future use and best overall value.
(c) Semiconductor Components Industries, LLC, 2000
1
November, 2000 - Rev. 1
Publication Order Number: 1N4728A/D
1N4728A - 1N4764A Series
ELECTRICAL CHARACTERISTICS (TA = 25C unless
otherwise noted, VF = 1.2 V Max., IF = 200 mA for all types) Symbol VZ IZT ZZT IZK ZZK IR VR IF VF Ir Parameter Reverse Zener Voltage @ IZT Reverse Current Maximum Zener Impedance @ IZT Reverse Current Maximum Zener Impedance @ IZK Reverse Leakage Current @ VR Breakdown Voltage Forward Current Forward Voltage @ IF Surge Current @ TA = 25C VZ VR IR VF IZT V IF I
Zener Voltage Regulator
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted, VF = 1.2 V Max, IF = 200 mA for all types)
Zener Voltage (3.)(4.) JEDEC Device (2.) 1N4728A 1N4729A 1N4730A 1N4731A 1N4732A VZ (Volts) Min 3.14 3.42 3.71 4.09 4.47 Nom 3.3 3.6 3.9 4.3 4.7 Max 3.47 3.78 4.10 4.52 4.94 @ IZT (mA) 76 69 64 58 53 Zener Impedance (5.) ZZT @ IZT (W) 10 10 9 9 8 ZZK @ IZK (W) 400 400 400 400 500 (mA) 1 1 1 1 1 Leakage Current IR @ VR (A Max) 100 100 50 10 10 (Volts) 1 1 1 1 1 Ir (6.) (mA) 1380 1260 1190 1070 970
1N4733A 1N4734A 1N4735A 1N4736A 1N4737A 1N4738A 1N4739A 1N4740A 1N4741A 1N4742A
4.85 5.32 5.89 6.46 7.13 7.79 8.65 9.50 10.45 11.40
5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12
5.36 5.88 6.51 7.14 7.88 8.61 9.56 10.50 11.55 12.60
49 45 41 37 34 31 28 25 23 21
7 5 2 3.5 4 4.5 5 7 8 9
550 600 700 700 700 700 700 700 700 700
1 1 1 1 0.5 0.5 0.5 0.25 0.25 0.25
10 10 10 10 10 10 10 10 5 5
1 2 3 4 5 6 7 7.6 8.4 9.1
890 810 730 660 605 550 500 454 414 380
TOLERANCE AND TYPE NUMBER DESIGNATION 2. The JEDEC type numbers listed have a standard tolerance on the nominal zener voltage of 5%. SPECIALS AVAILABLE INCLUDE: 3. Nominal zener voltages between the voltages shown and tighter voltage tolerances. For detailed information on price, availability, and delivery, contact your nearest ON Semiconductor representative. ZENER VOLTAGE (VZ) MEASUREMENT 4. ON Semiconductor guarantees the zener voltage when measured at 90 seconds while maintaining the lead temperature (TL) at 30C 1C, 3/8 from the diode body. ZENER IMPEDANCE (ZZ) DERIVATION 5. The zener impedance is derived from the 60 cycle ac voltage, which results when an ac current having an rms value equal to 10% of the dc zener current (IZT or IZK) is superimposed on IZT or IZK. SURGE CURRENT (IR) NON-REPETITIVE 6. The rating listed in the electrical characteristics table is maximum peak, non-repetitive, reverse surge current of 1/2 square wave or equivalent sine wave pulse of 1/120 second duration superimposed on the test current, IZT, per JEDEC registration; however, actual device capability is as described in Figure 5 of the General Data -- DO-41 Glass.
http://onsemi.com
2
1N4728A - 1N4764A Series
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted, VF = 1.2 V Max, IF = 200 mA for all types) (continued)
Zener Voltage (3.)(4.) JEDEC Device (2.) 1N4743A 1N4744A 1N4745A 1N4746A 1N4747A VZ (Volts) Min 12.4 14.3 15.2 17.1 19.0 Nom 13 15 16 18 20 Max 13.7 15.8 16.8 18.9 21.0 @ IZT (mA) 19 17 15.5 14 12.5 Zener Impedance (5.) ZZT @ IZT (W) 10 14 16 20 22 ZZK @ IZK (W) 700 700 700 750 750 (mA) 0.25 0.25 0.25 0.25 0.25 Leakage Current IR @ VR (A Max) 5 5 5 5 5 (Volts) 9.9 11.4 12.2 13.7 15.2 Ir (6.) (mA) 344 304 285 250 225
1N4748A 1N4749A 1N4750A 1N4751A 1N4752A
1N4753A 1N4754A 1N4755A 1N4756A 1N4757A 1N4758A 1N4759A 1N4760A 1N4761A 1N4762A 1N4763A
20.9 22.8 25.7 28.5 31.4
34.2 37.1 40.9 44.7 48.5 53.2 58.9 64.6 71.3 77.9 86.5
22 24 27 30 33
36 39 43 47 51 56 62 68 75 82 91
23.1 25.2 28.4 31.5 34.7
37.8 41.0 45.2 49.4 53.6 58.8 65.1 71.4 78.8 86.1 95.6
11.5 10.5 9.5 8.5 7.5
7 6.5 6 5.5 5 4.5 4 3.7 3.3 3 2.8
23 25 35 40 45
50 60 70 80 95 110 125 150 175 200 250
750 750 750 1000 1000
1000 1000 1500 1500 1500 2000 2000 2000 2000 3000 3000
0.25 0.25 0.25 0.25 0.25
0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25
5 5 5 5 5
5 5 5 5 5 5 5 5 5 5 5
16.7 18.2 20.6 22.8 25.1
27.4 29.7 32.7 35.8 38.8 42.6 47.1 51.7 56 62.2 69.2
205 190 170 150 135
125 115 110 95 90 80 70 65 60 55 50
TOLERANCE AND TYPE NUMBER DESIGNATION 2. The JEDEC type numbers listed have a standard tolerance on the nominal zener voltage of 5%. SPECIALS AVAILABLE INCLUDE: 3. Nominal zener voltages between the voltages shown and tighter voltage tolerances. For detailed information on price, availability, and delivery, contact your nearest ON Semiconductor representative. ZENER VOLTAGE (VZ) MEASUREMENT 4. ON Semiconductor guarantees the zener voltage when measured at 90 seconds while maintaining the lead temperature (TL) at 30C 1C, 3/8 from the diode body. ZENER IMPEDANCE (ZZ) DERIVATION 5. The zener impedance is derived from the 60 cycle ac voltage, which results when an ac current having an rms value equal to 10% of the dc zener current (IZT or IZK) is superimposed on IZT or IZK. SURGE CURRENT (IR) NON-REPETITIVE 6. The rating listed in the electrical characteristics table is maximum peak, non-repetitive, reverse surge current of 1/2 square wave or equivalent sine wave pulse of 1/120 second duration superimposed on the test current, IZT, per JEDEC registration; however, actual device capability is as described in Figure 5 of the General Data -- DO-41 Glass.
http://onsemi.com
3
1N4728A - 1N4764A Series
PD , MAXIMUM STEADY STATE POWER DISSIPATION (WATTS)
1.25 1 0.75 0.5 0.25 L = 1 L = 1/8 L = 3/8
L = LEAD LENGTH TO HEAT SINK
0
20
40
60 80 100 120 140 TL, LEAD TEMPERATURE (C)
160
180
200
Figure 1. Power Temperature Derating Curve
http://onsemi.com
4
1N4728A - 1N4764A Series
a. Range for Units to 12 Volts
VZ , TEMPERATURE COEFFICIENT (mV/C) VZ , TEMPERATURE COEFFICIENT (mV/C) +12 +10 +8 +6 +4 +2 0 -2 -4 2 3 4 5 6 7 8 9 VZ, ZENER VOLTAGE (VOLTS) 10 11 12 RANGE VZ @ IZT 100 70 50 30 20 10 7 5 3 2 1 10 20 30 50 VZ, ZENER VOLTAGE (VOLTS) 70 100 RANGE VZ @ IZT
b. Range for Units to 12 to 100 Volts
Figure 2. Temperature Coefficients (-55C to +150C temperature range; 90% of the units are in the ranges indicated.)
JL , JUNCTION TO LEAD THERMAL RESISTANCE (mV/C/W)
150 125 100 75 50 25 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
VZ , TEMPERATURE COEFFICIENT (mV/C)
175
+6 +4 +2 0 -2 -4 VZ @ IZ TA = 25C 20 mA
0.01 mA 1 mA NOTE: BELOW 3 VOLTS AND ABOVE 8 VOLTS NOTE: CHANGES IN ZENER CURRENT DO NOT NOTE: EFFECT TEMPERATURE COEFFICIENTS 3 4 5 6 7 8 VZ, ZENER VOLTAGE (VOLTS)
L, LEAD LENGTH TO HEAT SINK (INCHES)
Figure 3. Typical Thermal Resistance versus Lead Length
100 70 50 30 20 10 7 5 3 2 1 0.01 10% DUTY CYCLE 20% DUTY CYCLE 5% DUTY CYCLE
Figure 4. Effect of Zener Current
Ppk , PEAK SURGE POWER (WATTS)
11 V-100 V NONREPETITIVE 3.3 V-10 V NONREPETITIVE
RECTANGULAR WAVEFORM TJ = 25C PRIOR TO INITIAL PULSE
0.02
0.05
0.1
0.2
0.5
This graph represents 90 percentile data points. For worst case design characteristics, multiply surge power by 2/3.
1 2 5 PW, PULSE WIDTH (ms)
10
20
50
100
200
500
1000
Figure 5. Maximum Surge Power
http://onsemi.com
5
1N4728A - 1N4764A Series
1000 500 200 100 50 20 10 5 2 1 0.1 0.2 0.5 1 2 5 10 IZ, ZENER CURRENT (mA) 20 50 100 6.2 V VZ = 2.7 V 47 V 27 V TJ = 25C iZ(rms) = 0.1 IZ(dc) f = 60 Hz 1000 700 500 200 100 70 50 20 10 7 5 2 1 1 2 3 5 7 10 20 30 VZ, ZENER VOLTAGE (V) 50 70 100 TJ = 25C iZ(rms) = 0.1 IZ(dc) f = 60 Hz
Z Z , DYNAMIC IMPEDANCE (OHMS)
Z Z , DYNAMIC IMPEDANCE (OHMS)
IZ = 1 mA 5 mA 20 mA
Figure 6. Effect of Zener Current on Zener Impedance
Figure 7. Effect of Zener Voltage on Zener Impedance
10000 7000 5000 2000 1000 700 500 200 100 70 50 I R , LEAKAGE CURRENT ( A) 20 10 7 5 2 1 0.7 0.5 0.2 0.1 0.07 0.05 0.02 0.01 0.007 0.005 0.002 0.001 3 4 5 6 7 8
400 300 TYPICAL LEAKAGE CURRENT AT 80% OF NOMINAL BREAKDOWN VOLTAGE 200 C, CAPACITANCE (pF) 100 50 20 10 8 4 1 2 0 V BIAS 1 V BIAS
50% OF BREAKDOWN BIAS 5 10 20 VZ, NOMINAL VZ (VOLTS) 50 100
Figure 9. Typical Capacitance versus VZ
1000 500 I F , FORWARD CURRENT (mA) 200 100 50 20 10 5 150C 2 9 10 11 12 13 14 15 1 0.4 0.5 0.6 0.7 0.8 75C 25C 0C 0.9 1 1.1
+125C
MINIMUM MAXIMUM
+25C
VZ, NOMINAL ZENER VOLTAGE (VOLTS)
VF, FORWARD VOLTAGE (VOLTS)
Figure 8. Typical Leakage Current
Figure 10. Typical Forward Characteristics
http://onsemi.com
6
1N4728A - 1N4764A Series
APPLICATION NOTE Since the actual voltage available from a given zener diode is temperature dependent, it is necessary to determine junction temperature under any set of operating conditions in order to calculate its value. The following procedure is recommended: Lead Temperature, TL, should be determined from:
TL = LAPD + TA.
TJL is the increase in junction temperature above the lead temperature and may be found as follows:
TJL = JLPD.
LA is the lead-to-ambient thermal resistance (C/W) and PD is the power dissipation. The value for LA will vary and depends on the device mounting method. LA is generally 30 to 40C/W for the various clips and tie points in common use and for printed circuit board wiring. The temperature of the lead can also be measured using a thermocouple placed on the lead as close as possible to the tie point. The thermal mass connected to the tie point is normally large enough so that it will not significantly respond to heat surges generated in the diode as a result of pulsed operation once steady-state conditions are achieved. Using the measured value of TL, the junction temperature may be determined by:
TJ = TL + TJL.
JL may be determined from Figure 3 for dc power conditions. For worst-case design, using expected limits of IZ, limits of PD and the extremes of TJ(TJ) may be estimated. Changes in voltage, VZ, can then be found from:
V = VZ TJ.
VZ, the zener voltage temperature coefficient, is found from Figure 2. Under high power-pulse operation, the zener voltage will vary with time and may also be affected significantly by the zener resistance. For best regulation, keep current excursions as low as possible. Surge limitations are given in Figure 5. They are lower than would be expected by considering only junction temperature, as current crowding effects cause temperatures to be extremely high in small spots, resulting in device degradation should the limits of Figure 5 be exceeded.
http://onsemi.com
7
1N4728A - 1N4764A Series
OUTLINE DIMENSIONS
Zener Voltage Regulator Diodes - Axial Leaded
1 Watt DO-41 Glass
B
K F
D
NOTES: 1. ALL RULES AND NOTES ASSOCIATED WITH JEDEC DO-41 OUTLINE SHALL APPLY. 2. POLARITY DENOTED BY CATHODE BAND. 3. LEAD DIAMETER NOT CONTROLLED WITHIN F DIMENSION. DIM A B D F K MILLIMETERS MIN MAX 4.07 5.20 2.04 2.71 0.71 0.86 --1.27 27.94 --INCHES MIN MAX 0.160 0.205 0.080 0.107 0.028 0.034 --0.050 1.100 ---
A F K
GLASS DO-41 CASE 59-03 ISSUE M
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com Fax Response Line: 303-675-2167 or 800-344-3810 Toll Free USA/Canada N. American Technical Support: 800-282-9855 Toll Free USA/Canada EUROPE: LDC for ON Semiconductor - European Support German Phone: (+1) 303-308-7140 (Mon-Fri 2:30pm to 7:00pm CET) Email: ONlit-german@hibbertco.com French Phone: (+1) 303-308-7141 (Mon-Fri 2:00pm to 7:00pm CET) Email: ONlit-french@hibbertco.com English Phone: (+1) 303-308-7142 (Mon-Fri 12:00pm to 5:00pm GMT) Email: ONlit@hibbertco.com EUROPEAN TOLL-FREE ACCESS*: 00-800-4422-3781 *Available from Germany, France, Italy, UK, Ireland CENTRAL/SOUTH AMERICA: Spanish Phone: 303-308-7143 (Mon-Fri 8:00am to 5:00pm MST) Email: ONlit-spanish@hibbertco.com Toll-Free from Mexico: Dial 01-800-288-2872 for Access - then Dial 866-297-9322 ASIA/PACIFIC: LDC for ON Semiconductor - Asia Support Phone: 303-675-2121 (Tue-Fri 9:00am to 1:00pm, Hong Kong Time) Toll Free from Hong Kong & Singapore: 001-800-4422-3781 Email: ONlit-asia@hibbertco.com JAPAN: ON Semiconductor, Japan Customer Focus Center 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan 141-0031 Phone: 81-3-5740-2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative.
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8
1N4728A/D


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